Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon Films
- 1 April 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (4A), L227
- https://doi.org/10.1143/jjap.24.l227
Abstract
Defect density dependence on various surface cleaning conditions for molecular beam epitaxial (MBE) silicon films was investigated. Defect-free films were obtained on (100) and (511) wafers, using a combination of ozone cleaning and predeposition process after the usual wet cleaning. On the (111) wafer, the defect density dependence on growth rate was examined. The two-step growth-rate procedure was effective in decreasing stacking faults on the (111) wafer. The difference in defect density between (100) and (111) wafers is also discussed.Keywords
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