Gas-phase reactions in plasmas of SF6 with O2 in He
- 1 September 1988
- journal article
- Published by Springer Nature in Plasma Chemistry and Plasma Processing
- Vol. 8 (3), 263-280
- https://doi.org/10.1007/bf01020406
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Thermochemical Data on Gas Phase Compounds of Sulfur, Fluorine, Oxygen, and Hydrogen Related to Pyrolysis and Oxidation of Sulfur HexafluorideJournal of Physical and Chemical Reference Data, 1987
- A model for the etching of Si in CF4 plasmas: Comparison with experimental measurementsPlasma Chemistry and Plasma Processing, 1986
- A model of the chemical processes occurring in CF4/O2 discharges used in plasma etchingPlasma Chemistry and Plasma Processing, 1986
- Computer simulation of a CF4 plasma etching siliconJournal of Applied Physics, 1984
- A kinetic study of the plasma-etching process. I. A model for the etching of Si and SiO2 in CnFm/H2 and CnFm/O2 plasmasJournal of Applied Physics, 1982
- Mechanisms of radical production in CF3Cl, CF3Br, and related plasma etching gases: The role of added oxidantsPlasma Chemistry and Plasma Processing, 1981
- Decomposition and product formation in CF4-O2 plasma etching silicon in the afterglowJournal of Applied Physics, 1981
- Plasma etching of Si and SiO2 in SF6–O2 mixturesJournal of Applied Physics, 1981
- The plasma oxidation of CF4 in a tubular-alumina fast-flow reactorJournal of Applied Physics, 1979
- Plasma etching—A discussion of mechanismsJournal of Vacuum Science and Technology, 1979