Grain-boundary self-diffusion in Au by Ar sputtering technique

Abstract

Grain‐boundary self‐diffusion measurements over the temperature range 367–444°C have been made in polycrystallineAu using Au195 radioactive tracer and rf backsputtering technique for serial sectioning. The diffusion parameters are Qb = 0.88 eV and δDb 0 = 3.1 × 10−10 cm3/sec which are discussed in relation to the possible vacancydiffusion mechanism. Both the parameters may be qualitatively identified with the motional properties of vacancies. The activation energy for grain‐boundary self‐diffusion in Au is in close agreement with that for low‐temperature electromigration in thin Au films reported in the literature.