Piezoresistance in-Type Gallium Antimonide
- 2 March 1964
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 133 (5A), A1450-A1451
- https://doi.org/10.1103/physrev.133.a1450
Abstract
The piezoresistance effect has been measured in -type gallium antimonide having a hole concentration of approximately 1× over a temperature range from 77 to 350°K. At 300°K, the values of the piezoresistance coefficients , , and are 5×, -2.4×, and 87× /dyn, respectively. A germanium-type valence band structure is shown to be consistent with both the piezoresistance results and previous magnetoresistance results, whereas none of the many-valley models are consistent with both measurements.
Keywords
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