Piezoresistance inp-Type Gallium Antimonide

Abstract

The piezoresistance effect has been measured in $p$-type gallium antimonide having a hole concentration of approximately 1×${10}^{17}$ ${\mathrm{cm}}^{-3\mathrm{}}$ over a temperature range from 77 to 350°K. At 300°K, the values of the piezoresistance coefficients ${\pi }_{11}$, ${\pi }_{12}$, and ${\pi }_{44}$ are 5×${10}^{-12\mathrm{}}$, -2.4×${10}^{-12\mathrm{}}$, and 87×${10}^{-12\mathrm{}}$ ${\mathrm{cm}}^2$/dyn, respectively. A germanium-type valence band structure is shown to be consistent with both the piezoresistance results and previous magnetoresistance results, whereas none of the many-valley models are consistent with both measurements.