Control of the Initial Stage of Ge Overgrowth on CaF2/Si Structures by Electron Beam Exposure
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Reduction of Ca and F Segregated at the Surface of a Si/CaF2/Si(100) Structure By Solid Phase Epitaxy of SiMRS Proceedings, 1985
- Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperatureJournal of Applied Physics, 1984
- Summary Abstract: Single crystal SrF2 on GaAs(001)—an electron beam resist and dielectric for insulator/semiconductor structuresJournal of Vacuum Science & Technology B, 1984
- Improvement of Crystalline Quality of Si Films on CaF2/Si Structures by Ion Implantation and Solid Phase RecrystallizationJapanese Journal of Applied Physics, 1983
- Thin-film CaF2 inorganic electron resist and optical-read storage mediumApplied Physics Letters, 1982