Surface and bulk defects in hydrogenated amorphous silicon and silicon-based alloy films
- 15 November 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (10), 5045-5049
- https://doi.org/10.1063/1.342458
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Thermal equilibrium process in undoped hydrogenated amorphous silicon and silicon-carbon alloy filmsApplied Physics Letters, 1988
- Study of surface/interface and bulk defect density in a-Si:H by means of photothermal deflection spectroscopy and photoconductivityJournal of Non-Crystalline Solids, 1987
- Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon filmsApplied Physics Letters, 1987
- Thickness dependences of properties of P- and B-doped hydrogenated amorphous siliconPhilosophical Magazine Part B, 1984
- Thickness dependences of properties of P- and B-doped hydrogenated amorphous siliconPhilosophical Magazine Part B, 1984
- Density of the gap states in undoped and doped glow discharge a-Si:HSolar Energy Materials, 1983
- Optical absorption spectra of surface or interface states in hydrogenated amorphous siliconApplied Physics Letters, 1983
- Optically induced electron spin resonance in doped amorphous siliconSolid State Communications, 1977