Interface shape studies for silicon ribbon growth by the EFG technique
- 1 April 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 61 (3), 485-493
- https://doi.org/10.1016/0022-0248(83)90177-x
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Interface shape studies for silicon ribbon growth by the EFG techniqueJournal of Crystal Growth, 1983
- Imperfections and impurities in EFG silicon ribbonsJournal of Crystal Growth, 1980
- High speed EFG of wide silicon ribbonJournal of Crystal Growth, 1980
- Growth and characterization of sapphire ribbon crystalsJournal of Crystal Growth, 1980
- Aluminum redistribution in EFG of silicon ribbonJournal of Crystal Growth, 1980
- Impurity redistribution in EFGJournal of Crystal Growth, 1978
- The dislocation-free growth of gadolinium gallium garnet single crystalsJournal of Materials Science, 1973
- CONTROL OF LINEAGE STRUCTURE IN ALUMINUM CRYSTALS GROWN FROM THE MELTCanadian Journal of Physics, 1958