Electron traps in AlGaAs grown by molecular-beam epitaxy

Abstract

Using deep‐level transient capacitance spectroscopy we have investigated deep electron traps in n‐AlGaAs grown by molecular‐beam epitaxy (MBE). The thermal activation energies of seven traps, labeled ME1–ME7, observed in this study increase with increasing Al content(x) up to the direct‐indirect crossover point (x∼0.42), but show only a small change with further increases in Al content. Traps ME4–ME7 are dominant in samples with x≤0.2. Traps ME4–ME6 strongly depend on the growth ambient. The concentration of ME7 is almost independent of the ambient in the growth chamber but decreases rapidly with increasing growth temperature. ME7 is a native defect and can almost certainly be identified with the trap EL2 observed in bulk and vapor‐phase epitaxially grown GaAs. Traps ME4–ME6 are probably formed by impurities involving oxygen such as CO, H₂O, and AsO in the growth ambient. All of the traps, ME5–ME7 are clearly responsible for a decrease in the photoluminescence intensity of MBE grown AlGaAs.