Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Open Access
- 6 May 2009
- journal article
- research article
- Published by Springer Science and Business Media LLC in Nanoscale Research Letters
- Vol. 4 (8), 846-849
- https://doi.org/10.1007/s11671-009-9326-6
Abstract
GaAs was radially deposited on InAs nanowires by metal–organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given.Keywords
This publication has 23 references indexed in Scilit:
- Formation of Hierarchical InAs Nanoring / GaAs Nanowire HeterostructuresAngewandte Chemie-International Edition, 2009
- Growth, Cathodoluminescence and Field Emission of ZnS Tetrapod Tree‐like HeterostructuresAdvanced Functional Materials, 2008
- Visualization of Carrier Depletion in Semiconducting NanowiresSmall, 2007
- Synergetic nanowire growthNature Nanotechnology, 2007
- Fully Depleted Nanowire Field‐Effect Transistor in Inversion ModeSmall, 2007
- Semiconductor Nanowires: From Self‐Organization to Patterned GrowthSmall, 2006
- Observation of a Wurtzite Form of Gallium ArsenidePhysical Review Letters, 2005
- Zinc blende GaAs films grown on wurtzite GaN∕sapphire templatesApplied Physics Letters, 2005
- Gallium Nitride-Based Nanowire Radial Heterostructures for NanophotonicsNano Letters, 2004
- Chemical trend of band offsets at wurtzite/zinc-blende heterocrystalline semiconductor interfacesPhysical Review B, 1994