The design of a one megabit non-volatile M-R memory chip using 1.5*5 mu m cells
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 24 (6), 3117-3119
- https://doi.org/10.1109/20.92353
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Perturbations to the Stoner–Wohlfarth threshold in 2×20 μm M-R memory elementsJournal of Applied Physics, 1988
- Threshold properties of 1, 2 and 4 µm multilayer magneto-resistive memory cellsIEEE Transactions on Magnetics, 1987
- Magnetoresistance in laminated NiFe filmsJournal of Applied Physics, 1982