Electromigration in thin aluminum films on titanium nitride

Abstract

The aluminum electromigration drift velocity was measured at the temperature range 250–400 °C. A threshold current density was found inversely proportional to the stripe length. An activation energy of 0.65 eV was found for the drift velocity. The occurrence of the threshold is explained by opposing chemical gradients created by the atom pile‐up and depletion at the stripe ends. The threshold may explain several observations reported previously. The threshold is increased by decreasing the temperature or by enclosing the aluminum in silicon nitride. Virtually no electromigration is seen for very short aluminum stripes even at current densities above 10⁶ A/cm².