Electron transport in a model Si transistor
- 24 August 2000
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 44 (9), 1689-1695
- https://doi.org/10.1016/s0038-1101(00)00096-4
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Elementary scattering theory of the Si MOSFETIEEE Electron Device Letters, 1997
- An analytical expression for the current in short-base transistorsSolid-State Electronics, 1995
- A critical examination of the assumptions underlying macroscopic transport equations for silicon devicesIEEE Transactions on Electron Devices, 1993
- Self-consistent scattering matrix calculation of the distribution function in semiconductor devicesApplied Physics Letters, 1992
- A scattering matrix approach to device simulationSolid-State Electronics, 1990
- Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effectsPhysical Review B, 1988
- The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistorsIEEE Transactions on Electron Devices, 1988
- An investigation of steady-state velocity overshoot in siliconSolid-State Electronics, 1985
- The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materialsReviews of Modern Physics, 1983
- Diffusion near an absorbing boundarySolid-State Electronics, 1974