NMR and IR Studies on Hydrogenated Amorphous Si1-xCx Films

Abstract

NMR and IR studies have been carried out on glow-discharge-deposited a-Si_1-x C _x :H films. The hydrogen content increases with an increase in x up to 0.4 mainly in gathered form contributing to the broad component of the NMR line. By combining the NMR and IR results, the proportionality between the number of H bonded to C and the intensity of IR absorption due to the C–H stretching mode vibration is ascertained. The proportionality constant is found to be A ^str _C–H=1.7×10²¹ cm^-2.