Bias-enhanced nucleation and growth of the aligned carbon nanotubes with open ends under microwave plasma synthesis

Abstract

Aligned carbon nanotubes with open ends have been fabricated on silicon wafer in one step using a microwave plasma enhanced chemical vapor deposition system with a mixture of methane and hydrogen as precursors. High concentration hydrogen plasma and high negative bias voltage to the substrate induce anisotropic etching of carbon nanotubes and can effectively reduce the randomly oriented carbon nanotubes. The mechanism of aligned carbon nanotubes with open ends is proposed in this letter.