Tunneling spectroscopy of Landau levels in electron inversion layers on (100) Si surfaces
- 1 July 1984
- journal article
- Published by Elsevier in Surface Science
- Vol. 142 (1-3), 314-321
- https://doi.org/10.1016/0039-6028(84)90328-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Tunneling spectroscopy of electron space charge layers on (111)-SiSolid State Communications, 1982
- Tunnel spectroscopy of subband structure in n-inversion layers on (111) and (100) Si surfacesSurface Science, 1982
- Electron Tunneling and Capacitance Studies of a Quantized Surface Accumulation LayerPhysical Review B, 1973
- Effect of Electric and Magnetic Fields on the Self-Consistent Potential at the Surface of a Degenerate SemiconductorPhysical Review B, 1972
- Electron-Tunneling Studies of a Quantized Surface Accumulation LayerPhysical Review B, 1971
- Conductance Anomalies due to Space-Charge-Induced Localized StatesPhysical Review B, 1967