Analysis of microsegregation in crystals
- 1 March 1980
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 48 (3), 363-366
- https://doi.org/10.1016/0022-0248(80)90030-5
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- The effect of fluctuating growth rates on segregation in crystals grown from the melt: I. No backmeltingJournal of Crystal Growth, 1980
- A new look at the Burton, Prim, and Slichter model of segregation during crystal growth from the meltJournal of Crystal Growth, 1978
- On interpreting a quantity in the burton, prim and slichter equation as a diffusion boundary layer thicknessJournal of Crystal Growth, 1978
- Flow between a stationary and a rotating disk with suctionJournal of Fluid Mechanics, 1978
- Quantitative Analysis of the Effects of Destabilizing Vertical Thermal Gradients on Crystal Growth and Segregation: Ga‐Doped GeJournal of the Electrochemical Society, 1978
- Quantitative Analysis of Microsegregation in Silicon Grown by the Czochralski MethodJournal of the Electrochemical Society, 1976
- Experimental Approach to the Quantitative Determination of Dopant Segregation During Crystal Growth on a Microscale: Ga Doped GeJournal of the Electrochemical Society, 1973
- The Distribution of Solute in Crystals Grown from the Melt. Part I. TheoreticalThe Journal of Chemical Physics, 1953