Metal-amorphous silicon-silicon tunnel rectifier
- 15 June 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (12), 1144-1146
- https://doi.org/10.1063/1.94671
Abstract
We report a new metal-semiconductor thin-film diode with an I-V characteristic similar to that of a p-n junction. Its forward bias current is dominated by majority-carrier tunneling, and its reverse breakdown voltage is over 50 V. The fabrication process, the I-V curves, and the Auger depth profile of the interfacial layer are presented.Keywords
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