Abstract
A tight binding formulation is presented for the electronic transport coefficient such as DC conductivity and the Hall coefficient of structurally disordered systems. The formulation is performed with special care about the consistency with the calculation of the electronic density of states. Among existing theories for the density of states the approximation scheme proposed by Ishida and Yonezawa (see Progr. Theor. Phys., vol.99, p.731 (1973)) is especially considered here. Numerical calculations of the conductivity and the Hall coefficient are performed for a model of one hydrogen-like 1s orbital per atom. The atomic distribution function is assumed to be of a random hard-sphere type. A detailed analysis is made for the change of the transport properties with varying input parameters characteristic of the model, i.e. density and the hard-sphere diameter (in units of the effective Bohr radius). The results are also compared with those obtained from the random phase model due to Mott (1967), Hindley (1970) and Friedman (1971).