Conductivity studies for an electron surface layer onHg1−xCdxTe

Abstract

We examine the electronic transport properties of the interfacial charge layer in a metal-oxide–semiconductor structure on ${\mathrm{Hg}}_{1\mathrm{-}\mathrm{x}}$ ${\mathrm{Cd}}_{\mathrm{x}}$Te. We focus, in particular, on the conductivity discontinuities incurred when different quantized levels of the surface layer are successively filled with rising carrier density $N_s$. Three types of levels are considered: the electric subbands, Landau levels in a perpendicular magnetic field ($B_{\perp }$), and the magnetoelectric (hybrid) levels for a magnetic field parallel to surface ($B_{\mathrm{para}}$).