100 nm period silicon antireflection structures fabricated using a porous alumina membrane mask

Abstract

An ordered anodic porous alumina membrane has been used as a lithographic mask of ${\mathrm{SF}}_{\mathrm{6}}$ fast atom beam etching to generate a 100 nm period antireflection structure on a silicon substrate. The antireflection structure consists of a deep hexagonal grating with 100 nm period and aspect ratio of 12, which is a fine two-dimensional antireflection structure. In the wavelength region from 400 to 800 nm, the reflectivity of the silicon surface decreases from around 40% to less than 1.6%. The measured results are explained well with the theoretical results calculated on the basis of rigorous coupled-wave analysis.