RF performance of top-gated, zero-bandgap graphene field-effect transistors
- 1 December 2008
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 146 (01631918), 1-4
- https://doi.org/10.1109/iedm.2008.4796738
Abstract
We present the first experimental high-frequency measurements of graphene field-effect transistors (GFETs), demonstrating an fT of 14.7 GHz for a 500-nm-length device. We also present detailed measurement and analysis of velocity saturation in GFETs, demonstrating the potential for velocities approaching 108 cm/sec and the effect of an ambipolar channel on current-voltage characteristics.Keywords
This publication has 5 references indexed in Scilit:
- Current saturation in zero-bandgap, top-gated graphene field-effect transistorsNature Nanotechnology, 2008
- Ultrahigh electron mobility in suspended grapheneSolid State Communications, 2008
- Intrinsic and extrinsic performance limits of graphene devices on SiO2Nature Nanotechnology, 2008
- Two-dimensional gas of massless Dirac fermions in grapheneNature, 2005
- Electric Field Effect in Atomically Thin Carbon FilmsScience, 2004