Effects of compositional clustering on electron transport in In0.53Ga0.47As
- 15 October 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (8), 732-734
- https://doi.org/10.1063/1.93658
Abstract
A new theory of alloy scattering is proposed which assumes the presence of compositional clusters in alloy semiconductors. This is used in electron transport calculations for In0.53Ga0.47As, and it is found that good agreement can be obtained with experimental velocity‐field data, measured up to the threshold electric field. The theory assumes small (∼2%) fluctuations in composition over 1000 atoms.Keywords
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