Liquid Phase Epitaxial Growth of ( Hg1 − x Cd x ) Te from Tellurium‐Rich Solutions Using a Closed Tube Tipping Technique

Abstract

The liquidus temperatures for have been determined for , , and compositions by differential thermal analyses. films with compositions of have been grown by liquid phase epitaxy on (111) A oriented substrates. The Cd segregation coefficient has been determined to be . Films grown at around 550°C from 3 mm thick melts at slow cooling rates showed thicknesses close to those expected for equilibrium growth. The residual impurity in the LPE films was usually n‐type and was less than 10¹⁵ cm⁻³ in the better films. Photovoltaic diodes fabricated in the films have shown performance comparable to those fabricated in bulk grown crystals.