On the origin of RHEED intensity oscillations
- 1 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4), 23-27
- https://doi.org/10.1016/0022-0248(89)90342-4
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Monte Carlo simulations of Si(001) growth and reconstruction during molecular beam epitaxySurface Science, 1988
- The application of RHEED intensity effects to interrupted growth and interface formation during MBE growth of GaAs/(Al, Ga)As structuresApplied Physics A, 1988
- Reflection high-energy electron diffraction intensity oscillation study of InGaAs and InAlAs on InP: Application to pseudomorphic heterostructuresApplied Physics Letters, 1987
- Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling ApproachPhysical Review Letters, 1987
- Reflection high energy electron diffraction measurement of surface diffusion during the growth of gallium arsenide by MBEJournal of Crystal Growth, 1987
- Role of Relaxation in Epitaxial Growth: A Molecular-Dynamics StudyPhysical Review Letters, 1985
- Damped oscillations in reflection high energy electron diffraction during GaAs MBEJournal of Vacuum Science & Technology B, 1983
- RHEED streaks and instrument responseJournal of Vacuum Science & Technology A, 1983
- Oscillations in the surface structure of Sn-doped GaAs during growth by MBESurface Science, 1981
- Transients in the rate of crystal growthJournal of Crystal Growth, 1980