Computer calculations of semiconductor surface structures
- 31 May 1968
- journal article
- Published by Elsevier in Surface Science
- Vol. 10 (2), 215-231
- https://doi.org/10.1016/0039-6028(68)90020-4
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Low energy electron diffraction study of the (111) diamond surfaceSurface Science, 1966
- Low-Energy Electron-Diffraction Study of the Cleaved (110) Surfaces of InSb, InAs, GaAs, and GaSbJournal of Applied Physics, 1964
- Scattering Factors and Other Properties of Low-Energy Electron DiffractionJournal of Applied Physics, 1963
- Structural Properties of Cleaved Silicon and Germanium SurfacesJournal of Applied Physics, 1963
- Structures of Clean Surfaces of Germanium and Silicon. IJournal of Applied Physics, 1963
- Low-Energy Electron Diffraction Study of Silicon Surface StructuresThe Journal of Chemical Physics, 1962
- Surface Structures and Properties of Diamond-Structure SemiconductorsPhysical Review B, 1961
- Comparison of Structures of Surfaces Prepared in High Vacuum by Cleaving and by Ion Bombardment and AnnealingPhysical Review B, 1960
- Structure and adsorption characteristics of (111) and (11) surfaces of InSb cleaned by ion bombardment and annealingJournal of Physics and Chemistry of Solids, 1960
- Structure and Adsorption Characteristics of Clean Surfaces of Germanium and SiliconThe Journal of Chemical Physics, 1959