Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET's

Abstract

For very-short-gate FET's, the nonstationary electron dynamic effects greatly improve the device performance. By means of a simple self-consistent model which takes into account the transient transport effects, a comparison between the frequency behavior of various semiconductor materials is presented. It is shown that the dynamic properties for a given material are ameliorated for greater values of the product\mu_{0} \Delta \epsilon_{\Gamma L}. Thus Ga0.47In0.53As and InAs are shown to exhibit quite interesting dynamic operating properties.