Abstract
The exact solution to the diffusion equation for one kind of charge carrier is obtained for the metal‐insulator‐metal junction where trapping of the charge carriers may occur in the body of the insulator. The effect of surface states is not considered. The electric potential distribution is given in closed form and the exact dc current‐voltage relation is given in parametric form for any degree of trapping. A graph of the current‐voltage relation is shown for the special case where the two boundary metals are the same. A brief description of some experimental difficulties is given when test junctions were prepared entirely by the vacuum evaporation method.