Equivalent circuit model for active-layer photomixing: Parasitic-free modulation of semiconductor lasers
- 26 September 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (13), 1141-1143
- https://doi.org/10.1063/1.100038
Abstract
Direct modulation of a laser diode by active-layer photomixing is studied in terms of an equivalent circuit model. The model shows that this modulation technique achieves nearly perfect immunity to package, chip, and junction-related parasitic effects so that the measured modulation response reflects the intrinsic carrier-photon dynamics. The nonlinear gain effect is included in the model.Keywords
This publication has 3 references indexed in Scilit:
- Parasitic-free measurement of the fundamental frequency response of a semiconductor laser by active-layer photomixingApplied Physics Letters, 1988
- Frequency response of 1.3µm InGaAsP high speed semiconductor lasersIEEE Journal of Quantum Electronics, 1987
- Noise equivalent circuit of a semiconductor laser diodeIEEE Journal of Quantum Electronics, 1982