Single- and dual-axis lateral photodetectors of rectangular shape
- 1 August 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 22 (8), 581-590
- https://doi.org/10.1109/t-ed.1975.18181
Abstract
A 2-dimensional diffusion model of rectagular single-and dual-axis, lateral photodiodes is analyzed and the different underlying lateral effects are discussed for the small-signal (unbiased) and fully reverse-biased modes, with either infinite terminating impedances at midlateral point contacts or zero loading impedances at extended lateral contacts. For the single-axis detector with two opposite extended contacts, previous results of the 1-dimensional model appear to remain valid, and the output current difference to sum ratio in the fully reverse-biased mode is a linear function of the position of a narrow incident light beam. For the dual-axis detector with extended contacts at all four sides--except for small gaps at the vertices--an approximately linear relation has been found between the light spot position along an axis and the log ratio of the corresponding output currents. The transient responses of these configurations are discussed, and the utility of operation in the small-signal mode is illustrated with some typical parameter values.Keywords
This publication has 16 references indexed in Scilit:
- Pulse-response characteristics of position-sensitive photodetectorsIEEE Transactions on Electron Devices, 1974
- Si(Li) position sensitive detectorNuclear Instruments and Methods, 1973
- A nomogram for the design of position sensitive silicon detectorsNuclear Instruments and Methods, 1970
- One and Two Dimensional Position Sensing Semiconductor DetectorsIEEE Transactions on Nuclear Science, 1968
- The lateral photoeffectSolid-State Electronics, 1967
- Proprietes electriques des jonctions d'antimoniure d'indium de grande surfaceSolid-State Electronics, 1964
- An analysis of the radiation tracking transducerIRE Transactions on Electron Devices, 1962
- Photoeffects in Nonuniformly Irradiated p-n JunctionsJournal of Applied Physics, 1960
- A New Semiconductor Photocell Using Lateral PhotoeffectProceedings of the IRE, 1957
- The Effective Surface Recombination of a Germaniun Surface with a Floating BarrierProceedings of the IRE, 1955