Impact of mixing of disturbed bonding states on time-dependent dielectric breakdown in SiO2 thin films

Abstract

A temperature-independent field acceleration parameter γ and a field-independent activation energy ΔH 0 can be produced when different types of disturbed bonding states are mixed during time-dependent breakdowntesting of SiO 2 thin films. While γ for each defect type alone has the expected 1/T dependence and ΔH 0 shows a linear decrease with electric field, a nearly temperature-independent γ and a field-independent ΔH 0 can result when two or more states are mixed.