High-Temperature Hall Effect in GaAs
- 15 December 1968
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 25 (6), 1739
- https://doi.org/10.1143/jpsj.25.1739
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Effect of Te and S Donor Levels on the Properties ofnear the Direct-Indirect TransitionPhysical Review B, 1968
- Field dependence of mobility in the (100) conduction band minima of GaAsPhysics Letters, 1966
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960
- High-Temperature Hall Coefficient in GaAsJournal of Applied Physics, 1960