Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)
- 1 April 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (4A), L285-287
- https://doi.org/10.1143/jjap.25.l285
Abstract
Single domain GaAs layers have been grown on Si (100) surface by molecular beam epitaxy. RHEED observation indicates that antiphase disorder could be suppressed by tilting the orientation of Si (100) surface around axis but were unavoidable on just (100) surface. The off-axis substrates also improve the surface morphology.Keywords
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