DC electroluminescence from PECVD grown thin films of silicon-rich silica
- 1 January 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (18), 1703-1704
- https://doi.org/10.1049/el:19961122
Abstract
The authors report the fabrication of an electroluminescent MOS device using microclustered silicon in silica as the active layer. A DC electroluminescence spectrum is shown and compared with photoluminescence from the same material. A current-voltage curve is presented which shows weak rectifying behaviour and is consistent with a space-charge limited structure with a high resistivity layer.Keywords
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