Interaction of Dislocations with Impurities and its Influence on the Mechanical Properties of Silicon Crystals
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Mechanical Behavior of Czochralski-Silicon Crystals as Affected by Precipitation and Dissolution of Oxygen AtomsJapanese Journal of Applied Physics, 1982
- SOLUTION EFFECTS ON THE MECHANICAL BEHAVIOUR AND THE DISLOCATION MOBILITY IN SILICON CRYSTALSPublished by Elsevier ,1981
- The Origin of the Difference in the Mechanical Strengths of Czochralski-Grown Silicon and Float-Zone-Grown SiliconJapanese Journal of Applied Physics, 1980
- Motion of extended dislocations in silicon crystals observed by HVEMPhysica Status Solidi (a), 1979
- Dislocation pinning effect of oxygen atoms in siliconApplied Physics Letters, 1977
- Dislocation velocities and electronic doping in siliconJournal of Applied Physics, 1976
- Effect of oxygen on dislocation movement in siliconJournal of Applied Physics, 1975
- Dynamical state of dislocations in germanium crystals during deformationMaterials Science and Engineering, 1974
- Effect of Impurities on the Individual Dislocation Mobility in SiliconPhysica Status Solidi (b), 1969
- Impurity clustering effects on dislocation generation in siliconDiscussions of the Faraday Society, 1964