Delayed luminescence induced by intersubband optical excitation in a charge transfer double quantum well structure
- 3 March 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (9), 1128-1130
- https://doi.org/10.1063/1.118505
Abstract
Photoluminescence processes in a novel GaAs double quantum well (DQW) structure were studied and found to be controlled by a 10 μm mid-infrared (MIR) light. In this DQW structure, photogenerated electron-hole pairs are normally separated into different wells and their radiative recombination is inhibited. However, when a MIR light pulse is supplied to induce an electron intersubband transition, electrons are efficiently transferred to the hole-rich well, resulting in a significant enhancement of luminescence. By time shifting the MIR pulse with respect to the light pulse for interband excitation, we demonstrated the generation of a delayed photoluminescence. Device potentials of this MIR to near-infrared conversion are discussed.Keywords
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