High quality epitaxial films of CdTe on sapphire

Abstract

Films of CdTe were grown on (0001) basal plane sapphire by organometallic chemical vapor deposition. X-ray diffraction studies indicated single-crystal (111) orientation CdTe was produced. Typical growth rates were between 2–5 μm/h. Film mobilities as high as 950 cm2 V−1 s−1 at room temperature and 1600 cm2 V−1 s−1 at 77 °K were measured after appropriate annealing.