Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates
- 1 May 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (9), 4515-4519
- https://doi.org/10.1063/1.355943
Abstract
In this article, we present a crystallographic model to describe the epitaxial growth of wurtzite‐type thin films such as gallium nitride (GaN) on different orientations of sapphire (Al2O3) substrates. Through this model, we demonstrate the thin films grown on (00⋅1)Al2O3 have a better epilayer‐substrate interface quality than those grown on (01⋅2)Al2O3. We also show the epilayer grown on (00⋅1)Al2O3 are gallium‐terminated, and both (00⋅1) and (01⋅2) surfaces of sapphire crystals are oxygen‐terminated.Keywords
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