Self-interstitials and the 935 cm−1 band in silicon
- 28 August 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (9), 870-872
- https://doi.org/10.1063/1.101625
Abstract
Substitutional carbon in Czochralski Si is found to decrease the formation rate for a 935 cm−1 infrared absorption band under neutron irradiation while that for a 965 cm−1 band (interstitial carbon trapped at interstitial oxygen) increases. The observations support a controversial previous assignment of the 935 cm−1 band to a center with interstitial Si trapped by interstitial oxygen.Keywords
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