Characteristics of p-i junction amorphous silicon stripe-type photodiode array and its application to contact image sensor
- 1 May 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (5), 1271-1219
- https://doi.org/10.1109/16.108189
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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