VACANCY CLUSTERS IN DISLOCATION-FREE SILICON
- 1 February 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (3), 100-102
- https://doi.org/10.1063/1.1653111
Abstract
Dislocation‐free silicon crystals made by the floating zone technique contain vacancy clusters formed during cooling of the crystal after growth. The distribution and concentration of these defects have been determined. A model is presented describing the formation of these clusters. The influence of vacancy clusters on the leakage current of planar diodes is investigated.Keywords
This publication has 4 references indexed in Scilit:
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- Angular Distributions of (α, n) Reaction son Be and CJournal of the Physics Society Japan, 1963
- Growth of Silicon Crystals Free from DislocationsJournal of Applied Physics, 1959
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957