Measurements of the Average Energy Per Electron-Hole Pair Generation in Silicon between 5-320°K
- 1 August 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 19 (4), 9-19
- https://doi.org/10.1109/tns.1972.4326778
Abstract
The average energy expended to create an electron-hole pair in silicon εSi(T) has been measured in the 5-320°K temperature range with thin totally depleted surface barrier and diffused junction radiation detectors. The data have been normalized to a value of εSi (300°K) = 3.62 eV. A dependence of εSi on T much weaker than previously published by other authors has been observed. In the examined temperature range (5-320°K) our data are well fitted by εsi(T) = 2.15 Eg(T) + 1.21 eV where Eg(T) (in eV) is the value of the forbidden bandgap.Keywords
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