VB-5 comparison of accumulation and inversion mode LPCVD polysilicon MOSFET characteristics for memory applications
- 1 December 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 31 (12), 1983
- https://doi.org/10.1109/T-ED.1984.21881