Connections and disconnections on integrated circuits using nanosecond laser pulses

Abstract

Nanosecond pulses from a focused nitrogen pumped dye laser have been used to connect and disconnect conductors on FET chips. Experiments on connections between n⁺ diffusion layers and aluminum, separated by an insulating layer of SiO₂, show promise for high yield and reliability. The connections have Ohmic characteristics. Sectioned laser connections were examined with an electron microprobe and microscope in order to examine physical details of the connection process.