Electrical Properties ofn-Type GaSb

Abstract

The electrical conductivity and Hall coefficient of $n$-type GaSb doped with Se or Te have been measured, in most cases at 77° and 300°K, for samples with net donor concentrations between about 6×${10}^{16}$ ${\mathrm{cm}}^{-3\mathrm{}}$ and 2×${10}^{18}$ ${\mathrm{cm}}^{-3\mathrm{}}$. In general, the data are consistent with the two-band model which Sagar has proposed for the conduction band of GaSb, but systematic differences are observed between the properties of Se-doped and Te-doped samples. It seems likely that these differences are associated with impurity conduction of the metallic type. For the Te-doped samples, the electron mobility at 77°K apparently varies in an anomalous manner with increasing impurity concentration.