Ultralow-voltage boron-doped diamond field emitter vacuum diode
- 1 October 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 19 (10), 379-381
- https://doi.org/10.1109/55.720192
Abstract
A boron-doped diamond field emitter diode with ultralow turn-on voltage and high emission current is reported. The diamond field emitter diode structure with a built-in cap was fabricated using molds and electrostatic bonding techniques. The emission current versus anode voltage of the capped diamond emitter diode with boron doping, sp/sup 2/ content, and vacuum thermal electric (VTE) treatment shows a very low turn-on voltage of 2 V. A high emission current of 1 /spl mu/A at an anode voltage of less than 10 V can be obtained from a single diamond tip. The turn-on voltage is significantly lower than comparable silicon field emitters.Keywords
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