Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's
- 1 October 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 55 (1), 255-262
- https://doi.org/10.1016/0022-0248(81)90295-5
Abstract
No abstract availableKeywords
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