Radiative recombination at dangling bonds ina-Si:H

Abstract

New time-resolved luminescence measurements in annealed $a$-Si:H films confirm that the low-energy luminescence band at 0.7 eV represents radiative recombination at dangling-bond defects. A simple quantitative model is presented based on recombination between an electron trapped in a conduction-band-tail state and a hole trapped at a dangling bond which accounts for the optical and optically detected magnetic resonance results.