Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors
- 20 December 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (25), 4016-4018
- https://doi.org/10.1063/1.125523
Abstract
Deep traps responsible for current collapse phenomena in GaN metal–semiconductor field-effect transistors have been detected using a spectroscopic technique that employs the optical reversibility of current collapse to determine the photoionization spectra of the traps involved. In the n-channel device investigated, the two electron traps observed were found to be very deep and strongly coupled to the lattice. Photoionization thresholds for these traps were determined at 1.8 and at 2.85 eV. Both also appear to be the same traps recently associated with persistent photoconductivity effects in GaN.Keywords
This publication has 14 references indexed in Scilit:
- Optical characterization of the “E2” deep level in GaNApplied Physics Letters, 1999
- GaN Materials for High Power Microwave AmplifiersMRS Proceedings, 1998
- Fabrication and characterization of GaN FETsSolid-State Electronics, 1997
- Persistent photoconductivity in n-type GaNApplied Physics Letters, 1997
- Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain biasElectronics Letters, 1994
- Evidence for large lattice relaxation at theDXcenter in Si-dopedAsPhysical Review B, 1988
- Deep-level optical spectroscopy in GaAsPhysical Review B, 1981
- Deep impurities in semiconductors. II. The optical cross sectionJournal of Physics C: Solid State Physics, 1981
- Field induced reemission of electrons trapped in SiO2IEEE Transactions on Electron Devices, 1979
- Effect of electron trapping on IGFET characteristicsJournal of Electronic Materials, 1977