The infrared optical properties of SiO2 and SiO2 layers on silicon
- 1 February 1979
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (2), 1053-1057
- https://doi.org/10.1063/1.326080
Abstract
The complex index of refraction N=n−ik for amorphous SiO2 is derived in the energy range 0.03–1.0 eV by Kramers‐Kronig analysis of reflectance data. The results are used to compute the transmission, reflectance, and absorptivity of thin layers of SiO2 on Si substrates in the vicinity of the 0.14‐eV (9 μ) lattice absorption band of SiO2. The dependence of these quantities on the layer thickness and angle of incidence is discussed.Keywords
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