MOS field threshold increase by phosphorus-implanted field
- 1 May 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 20 (5), 473-476
- https://doi.org/10.1109/T-ED.1973.17676
Abstract
The threshold voltage of the field regions of p-channel Si gate devices can be controllably increased by phosphorus ion implantation prior to field oxidation without any additional masking step. For a 1.25-µ field oxide thickness, an increase of more than 20 V in intermediate field threshold can be achieved without lowering junction breakdown voltage.Keywords
This publication has 4 references indexed in Scilit:
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- Intrinsic Diffusion of Boron and Phosphorus in Silicon Free From Surface EffectsPhysical Review B, 1971
- Effect of junction curvature on breakdown voltage in semiconductorsSolid-State Electronics, 1966
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956